Публикации отдела 110

2011 год

• Modification to the central-cell correction of germanium acceptors / O. Drachenko, H. Schneider, M. Helm, D. Kozlov, V. Gavrilenko, J. Wosnitza, J. Leotin, Physical Review B 84, 245207 (2011);
• Usage of antimony segregation for selective doping of Si in molecular beam epitaxy / D. V. Yurasov, M. N. Drozdov, A. V. Murel, M. V. Shaleev, N. D. Zakharov and A. V. Novikov, Journal of Applied Physics 109, 113533 (2011);
• Direct band Ge and Ge/InGaAs quantum wells in GaAs / V. Ya. Aleshkin and A. A. Dubinov. Journal of Applied Physics 109, 123107 (2011);
• The near-field microwave technique for deep profiling of free carrier concentration in semiconductors / A. N. Reznik, I. A. Shereshevsky, N. K. Vdovicheva, Journal of Applied Physics 109, 094508 (2011);
• Giant resonant magneto-optic Kerr effect in nanostructured metamaterials / A. A. Zharov and V. V. Kurin, Journal of Applied Physics 109, 069902 (2011);
• High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array / V. V. Popov, D. M. Ermolaev, K. V. Maremyanin, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, S. Yu. Shapoval, Applied Physics Letters 98, 153504 (2011);
• Spin-orbit coupling effect on bismuth donor lasing in stressed silicon / R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. N. Shastin, S. G. Pavlov, H.-W. Hubers, H. Riemann, N. V. Abrosimov and A. K. Ramdas, Applied Physics Letters 99, 171108 (2011);
• Terahertz surface plasmons in optically pumped graphene structures / A. A. Dubinov, V. Ya. Aleshkin, V. Mitin, T. Otsuji, V. Ryzhii, Journal of Physics: Condensed Matter 23, 14302 (2011);
• Zener tunneling in semiconductor superlattices / J. Yu. Romanova, E. V. Demidov, L. G. Mourokh, and Yu. A. Romanov, Journal of Physics: Condensed Matter 23, 305801 (2011);
• Theory of g-factor enhancement in narrow-gap quantum well heterostructures / S. S. Krishtopenko, V. I. Gavrilenko, M. Goiran. Journal of Physics: Condensed Matter 23, 38560 (2011);
• On the role of heterolayer relaxation in luminescence response of Si/SiGe:Er structures / L. Krasilnikova, M. Stepikhova, Y. Drozdov, V. Chalkov, V. Shengurov, Z. Krasilnik, Physica Status Solidi C 8, 1044 (2011).

2010 год

• Plasmon-induced Purcell effect in InN/In metalsemiconductor Nanocomposites / T. V. Shubina, A. A. Toropov, V. N. Jmerik, D. I. Kuritsyn, L. V. Gavrilenko, Z. F. Krasil’nik, T. Araki, Y. Nanishi, B. Gil, A. O. Govorov, and S. V. Ivanov, Physical Review B 82, 073304 (2010);
• Generation of widely tunable continuous-wave terahertz radiation using a two-dimensional lattice of nonlinear metallic nanodimers / R. E. Noskov, A. A. Zharov, and M. V. Tsarev, Physical Review B 82, 073404 (2010);
• Observation of the electron-hole liquid in Si_1-xGe_x/ Si quantum wells by steady-state and time-resolved photoluminescence measurements / V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, A. V. Novikov, E. E. Onishchenko, and M. L. Skorikov, Physical Review B 82, 115313 (2010);
• Nonlinear nanofocusing in tapered plasmonic waveguides / A. R. Davoyan, I. V. Shadrivov, A. A. Zharov, D. K. Gramotnev, and Yu. S. Kivshar, Physical Review Letters 105, 116804 (2010);
• Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides / V. Ryzhii, A. A. Dubinov, T. Otsuji, V. Mitin, and M. S. Shur, Journal of Applied Physics 107, 054505 (2010);
• Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers / M. Ya. Valakh, P. M. Lytvyn, A. S. Nikolenko, V. V. Strelchuk, Z. F. Krasilnik, D. N. Lobanov, and A. V. Novikov, Applied Physics Letters 96, 141909 (2010);
• Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures / O. A. Mironov, M. Goiran, J. Galibert, D. V. Kozlov, A. V. Ikonnikov, K. E. Spirin, V. I. Gavrilenko, G. Isella, M. Kummer, H. von Känel, O. Drachenko, M. Helm, J. Wosnitza, R. J. H. Morris & D. R. Leadley, Journal of Low Temperature Physics 159, 216 (2010);
• Line in InAs/AlSb QW Heterostructures in High Magnetic Fields: Effects of Electron-Electron and Electron-Phonon Interaction. Splitting of Cyclotron Resonance / A. Ikonnikov, S. Krishtopenko, V. Gavrilenko, Y. Sadofyev, Y. Vasilyev, M. Orlita & W. Knap, Journal of Low Temperature Physics159, 197 (2010);
• Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(001) structures / D. V. Yurasov, M.V. Shaleev and А. V. Novikov, Journal of Crystal Growth 313, 12 (2010).

2009 год

• Electron Bloch Oscillations and Electromagnetic Transparency of Semiconductor Superlattices in Multi-Frequency Electric Fields / Yu. A. Romanov, J. Yu. Romanova, and L. G. Mourokh, Physical Review B 79, 245320 (2009);
• High-field splitting of the cyclotron resonance absorption in strained p-InGaAs_ХGaAs quantum wells / O. Drachenko, D. V. Kozlov, V. Ya. Aleshkin, V. I. Gavrilenko, K. V. Maremyanin, A. V. Ikonnikov, B. N. Zvonkov, M. Goiran, J. Leotin, G. Fasching, S. Winnerl, H. Schneider, J. Wosnitza, and M. Helm, Physical Review B 79, 073301 (2009);
• Plasmon-induced terahertz radiation generation due to symmetry breaking in a nonlinear metallic nanodimer / A. A. Zharov, R. E. Noskov, and M. V. Tsarev, Journal of Applied Physics 106, 073104 (2009).
• Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots / N. Sustersic, L. Nataraj, C. Weiland, M. Coppinger, M. V. Shaleev, A. V. Novikov, R. Opila, S. G. Cloutier, and J. Kolodzey, Applied Physics Letters 94, 183103 (2009);
• Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers / D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, and A. V. Novikov, Applied Physics Letters 95, 151902 (2009);
• Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers / D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, and A. V. Novikov, Applied Physics Letters 95, 151902 (2009);
• Stimulated terahertz emission due to electronic Raman scattering in silicon / S. G. Pavlov, U. Böttger, J. N. Hovenier, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, B. Redlich, A. F. G. van der Meer, and H.-W. Hübers, Applied Physics Letters 94, 171112 (2009);
• Terahertz laser with optically pumped graphene layers and Fabry-Perrot resonator / A. A. Dubinov, V. Ya. Aleshkin, M. Ryzhii, T. Otsuji, V. Ryzhii, Applied Physics Express 2, 092301 (2009);
• Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner, Physica E 41, 935 (2009);
• Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE grown Si: Er/Si diode structures / K. E. Kudryavtsev, V. P. Kuznetsov, D. V. Shengurov, V. B. Shmagin and Z. F. Krasilnik, Physica E 41(6), 899 (2009);
• Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov and P. Werner, Physica E 41(6), 935 (2009);
• Quantum cascade laser design based on impurity-band transitions of donors in Si/GeSi(111) heterostructures / N. A. Bekin, S. G. Pavlov, Physica B 404, 4716 (2009).

2008 год

• Terahertz Raman laser based on silicon doped with phosphorus / S. G. Pavlov, H.-W. Hübers, U. Böttger, R. Kh. Zhukavin, V. N. Shastin, J. N. Hovenier, B. Redlich, N. V. Abrosimov, and H. Riemann, Applied Physics Letters 92, 091111 (2008);
• Injection-seeded internal-reflection-mode p-Ge laser exceeds 10 W peak terahertz power / A. V. Muravjov, H. Saxena, R. E. Peale, C. J. Fredricksen, O. Edwards, and V. N. Shastin, Journal of Applied Physics 103, 083112 (2008);
• Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon / S. G. Pavlov, H.-W. Hübers, P. M. Haas, J. N. Hovenier, T. O. Klaassen, R. Kh. Zhukavin, V. N. Shastin, D. A. Carder and B. Redlich, Physical Review B 78, 165201 (2008);
• Room-temperature intracavity difference-frequency generation in butt-joint diode lasers / B. N. Zvonkov, A. A. Biryukov, A. V. Ershov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Maremyanin, S. V. Morozov A. A. Belyanin, V. V. Kocharovsky, Vl. V. Kocharovsky, Applied Physics Letters 92, 021122 (2008);
• Multi-crystalline silicon as active medium for terahertz intracenter lasers / S. G. Pavlov, H.-W. Hubers, N. V. Abrosimov, H. Riemann, L. V. Gavrilenko, A. V. Antonov, Physica B 403, 535 (2008);
• High field electron dynamics in dilute nitride GaAsN / S. Spasov, G. Allison, A. Patane, L. Eaves, M. Yu. Tretyakov, A. Ignatov, M. Hopkinson, and G. Hill, Applied Physics Letters 93, 022111 (2008);
• Quasi-guided electromagnetic beam propagation in one dimensional photonic crystal with a left-handed metamaterial / A. A. Zharov and N. A. Zharova, Journal of Applied Physics 103, 013109 (2008);

2007 год

• Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer / M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov, Applied Physics Letters 91, 021916 (2007);
• Terahertz gain on shallow donor transitions in silicon / R. Kh. Zhukavin, V. N. Shastin, S. G. Pavlov, H.-W. Hübers, J. N. Hovenier, T. O. Klaassen, A. F. G. van der Meer, Journal of Applied Physics 102, 093104 (2007);
• Low-threshold terahertz Si: As laser / S. G. Pavlov, U. Böttger, and H.-W. Hübers, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, and V. N. Shastin, N. V. Abrosimov and H. Riemann, Applied Physics Letters 90, 141109 (2007);
• Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon / R. Kh. Zhukavin, V. V. Tsyplenkov, K. A. Kovalevsky, V. N. Shastin, S. G. Pavlov, U. Böttger, H.-W. Hübers, H. Riemann, N. V. Abrosimov, and N. Nötzel, Applied Physics Letters 90, 051101 (2007);
• Magnetophonon Oscillations in the Negative Differential Conductance of Dilute Nitride GaAs_1-x N_x Submicron Diodes / G. Allison, S. Spasov, Patanè A., L. Eaves, Ignatov A, D. Maude, M. Hopkinson and R. Airey, Physical Review B 75, 1153251 (2007);
• Magnetic Field Tuning of Hot Electron Resonant Capture in a Semiconductor Device / S. Spasov, G Allison, Patanè A, Ignatov A, L. Eaves, D. Maude, M. Hopkinson and R. Airey, Applied Physics Letters 91 (14), 1421041 (2007);
• Fano resonance study in impurity photocurrent spectra of bulk GaAs and GaAs quantum wells doped by shallow donors / V. Ya. Aleshkin, A. V. Antonov, L. V. Gavrilenko, V. I. Gavrilenko, Physical Review B 75, 125201 (2007);
• Terahertz luminescence in strained GaAsN: Be layersunder strong electric fields / A. Shalygin, L. E. Vorob’ev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, A. V. Andrianov, A. O. Zakhar’in, A. Yu. Egorov, A. G. Gladyshev, O. V. Bondarenko, D. V. Kozlov, Applied Physics Letters 90, 161128 (2007);
• Nonlinear mode mixing in dual-wavelenght semiconductor lasers with tunnel junctions / S. M. Nekorkin, A. A. Biryukov, P. B. Demina, N. N. Semenov, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, A. A. Belyanin, V. V. Kocharovsky, Vl. V. Kocharovsky, Applied Physics Letters 90, 171106 (2007);
• Subsurface Near-Field Scanning Tomography / Gaikovich K. P., Physical Review Letters 98 (18), 1839021 (2007);
• Magnetoinductive waves in arrays of split-ring resonators / I. V. Shadrivov, A. N. Reznik, Y. S. Kivshar, Physica B 394, 180 (2007).