Список публикаций оппонента Бурдов В. А.

1. Radiative decay rates in Si crystallites with a donor ion / N.V. Derbenyova, V.A. Burdov // Journal of Applied Physics. — 2018. — V. 123. — P. 161598.
2. Effect of Doping with Shallow Donors on Radiative and Nonradiative Relaxation in Silicon Nanocrystals: Ab Initio Study / N.V. Derbenyova, V.A. Burdov // Journal of Physical Chemistry C. — 2018. — V. 122. — P. 850.
3. Electronic states and optical gap of phosphorus-doped silicon nanocrystals embedded in a silica host matrix / A.A. Konakov, V.A. Belyakov, V.A. Burdov // Solid State Phenomena. — 2014. — V. 205−206. — P. 486.
4. Quenching the photoluminescence from Si nanocrystals of smaller sizes in dense ensembles due to migration processes / V.A. Belyakov, K.V. Sidorenko, A.A. Konakov, A.V. Ershov, I.A. Chugrov, D.A. Grachev, D.A. Pavlov, A.I. Bobrov, V.A. Burdov // Journal of Luminescence. — 2014. — V. 175. — P. 1.
5. Resonant tunneling of carriers in silicon nanocrystals / N.V. Derbenyova, A.A. Konakov, V.A. Burdov // Journal of Applied Physics. — 2016. — V. 120. — P. 134302.
6. On the temperature dependence of silicon quantum dot photoluminescence / S.N. Nagornykh, V.I. Pavlenkov, A.N. Mikhaylov, A.I. Belov, V.A. Burdov, L.V. Krasilnikova, D.I. Kryzhkov, D.I. Tetelbaum // Russian Microelectronics. — 2014. — V. 43. — P. 575.