IPM RAS / Structure / Staff / Shmagin Vyacheslav

Shmagin Vyacheslav

Senior research associate of the Department for physics of semiconductors, PhD in chemistry.

Personal data

Born on 10.12.1951 in Kineshma.

Research interests

Light-emitting silicon micro — and nanostructures, including Si: Er based (1.55 mkm range) and other rare-earth elements, light-emitting SiGe/Si heterostructures with quantum-dimension objects.


  • 1973 — Faculty of radiophysics of N. I. Lobachevsky State University of Nizhniy Novgorod;
  • 1987 — defended PhD thesis «Study of electrically active impurities in hydryd Ge by method of contactless photovoltaic spectroscopy».


  • 1978 — 1997 — the Institute of Chemistry of High-Purity Substances RAS;
  • 1997 — present — Institute for Physics of Microstructures RAS.

Educational activity

PhD supervisor

    • 2008 — Remizov Dmitry «Impact excitation of erbium ions in silicon led structures grown by sublimation molecular-beam epitaxy«;
    • 2013 — Kudryavtsev Konstantine


  • lectroluminescence features in Er-containing centers with lined radiation spectra in epitaxial silicon structures»


  • V.B. Shmagin, A. V. Lyutov, D. Yu. Remizov, K. E. Kudryavtsev, M. V. Stepikhova and Z. F. Krasilnik. Temperature increase in erbium electroluminescence from epitaxially grown Si: Er diodes // Materials Science & Engineering B146, 256 (2008).
  • K.E. Kudryavtsev, V. B. Shmagin, D. V. Shengurov and Z. F. Krasilnik. Extremely sharp electroluminescence from Er-doped silicon // Semicond. Sci. Technol. 24, 065009 (2009);

Contact detail

Phone: +7 (831) 417-94-82 +230

E-mail: shm@ipmras.ru

© 2000—2024, IPM RAS.
E-mail: director@ipmras.ru

Address: Academicheskaya Str., 7, Afonino, Nizhny Novgorod region, Kstovsky district, Kstovo region, 603087, Russia

Phone: +7 831 4179473,
Fax: +7 831 4179464,
Mail address: GSP-105, Nizhny Novgorod, 603950, Russia