Shmagin Vyacheslav
Senior research associate of the Department for physics of semiconductors, PhD in chemistry.
Personal data
Born
Research interests
Light-emitting silicon micro — and nanostructures, including Si: Er based (1.55 mkm range) and other rare-earth elements, light-emitting SiGe/Si heterostructures with quantum-dimension objects.
Education
- 1973 — Faculty of radiophysics of
N. I. Lobachevsky State University of Nizhniy Novgorod; - 1987 — defended PhD thesis «Study of electrically active impurities in hydryd Ge by method of contactless photovoltaic spectroscopy».
Career
- 1978 — 1997 — the Institute of Chemistry of High-Purity Substances RAS;
- 1997 — present — Institute for Physics of Microstructures RAS.
Educational activity
PhD supervisor
- 2008 — Remizov Dmitry «Impact excitation of erbium ions in silicon led structures grown by sublimation molecular-beam epitaxy«;
- 2013 — Kudryavtsev Konstantine
«E
- lectroluminescence features in Er-containing centers with lined radiation spectra in epitaxial silicon structures»
Publication
- V.B. Shmagin,
A. V. Lyutov , D. Yu. Remizov,K. E. Kudryavtsev ,M. V. Stepikhova andZ. F. Krasilnik . Temperature increase in erbium electroluminescence from epitaxially grown Si: Er diodes // Materials Science & Engineering B146, 256 (2008). - K.E. Kudryavtsev,
V. B. Shmagin ,D. V. Shengurov andZ. F. Krasilnik . Extremely sharp electroluminescence from Er-doped silicon // Semicond. Sci. Technol. 24, 065009 (2009);
Contact detail
Phone:
E-mail: 
shm@ipmras.ru