Bekin Nickolay
Research associate of the Department for physics of semiconductors, PhD in Physics.
Personal data
Born on June 4, 1969.
Research interests
Physics of semiconductors, physics of low-dimensional heterostructures and superlattices, shallow impurities, laser physics.
Education
- 1986 — 1993 — Nizhny Novgorod State University, Faculty of Physics;
- 1997 — 2000 — post-graduate study in IPM RAS;
- 2001 — PhD in Physics (thesis — «Study of optical and tunneling transitions in heterostructures with a complex valence band using effective mass approximation«, supervisor — V. Ya. Aleshkin).
Career
- 1993 — present — trainee researcher, junior research associate, research associate of the IPM RAS.
Publications
- The conduction band and selection rules for interband optical transitions in strained GeSi/Ge and GeSi/Si heterostructures / V. Ya. Aleshkin,
N. A. Bekin , J. Phys. Condens. Matter 9, 4841 (1997); - Coulomb centers assisted tunneling in a delta-doped triple barrier SiGe heterostructure / R. Kh. Zhukavin,
N. A. Bekin ,D. N. Lobanov , Yu. N. Drozdov,P. A. Yunin ,M. N. Drozdov ,D. A. Pryakhin ,E. D. Chhalo ,D. V. Kozlov ,A. V. Novikov ,V. N. Shastin , Physica E 57, 42 (2014).
Contact detail
Phone:
E-mail: 
nbekin@ipmras.ru