Список публикаций оппонента Журавлев К.С.

1.Atmaca G., Narin P., Kutlu E., Malin T. V., Mansurov V. G., Zhuravlev K. S., Lisesivdin S.B., Ozbay E. Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures //IEEE Transactions on Electron Devices. — 2018. — Т. 65. — №. 3. — С. 950−956.

DOI: 10.1109/TED.2018.2796501
WOS:000425996300020

2.Aleksandrov I. A., Zhuravlev K. S. Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots //Superlattices and Microstructures. — 2018. — Т. 113. — С. 373−378.

DOI: 10.1016/j.spmi.2017.11.015
WOS:000425566100040

3.Osinnykh I. V., Malin T. V., Milakhin D. S., Plyusnin V. F., Zhuravlev K. S. Donor-acceptor pair emission via defects with strong electron-phonon coupling
in heavily doped AlxGa1-xN:Si layers with Al content x>0.5 //Japanese Journal of Applied Physics. — 2019. — Т. 58. — №. SC. — С. SCCB27.

DOI: 10.7567/1347−4065/ab0f1f
WOS:000474911400091

4.Малин Т. В., Милахин Д. С., Александров И. А., Земляков В. Е., Егоркин В. И., Зайцев А. А., Протасов Д. Ю., Кожухов А. С., Бер Б. Я., Казанцев Д. Ю.,
Мансуров В. Г., Журавлёв К. С. Нелегированный высокоомный буферный слой GaN для HEMT AlGaN/GaN //Письма в ЖТФ. — 2019. — Т. 45. — №. 15.

DOI: 10.21883/PJTF.2019.15.48081.17844
WOS:000484665300006

5.Aleksandrov I. A., Zhuravlev K. S. Luminescence line shapes of band to deep centre and donor-acceptor transitions in AlN //Journal of Physics: Condensed Matter.
— 2020. — Т. 32. — №. 43. — С. 435501.

DOI: 10.1088/1361−648X/aba295
WOS:000560100700001

6.Aleksandrov I. A., Malin T. V., Zhuravlev K. S., Trubina S. V., Erenburg S. B., Pecz B., Lebiadok Y. V. Diffusion in GaN/AlN superlattices: DFT and EXAFS study //Applied Surface Science. — 2020. — Т. 515. — С. 146001.

DOI: 10.1016/j.apsusc.2020.146001
WOS:000525637300029

7.Sonmez F., Ardali S., Atmaca G., Lisesivdin S. B., Malin T., Mansurov V., Zhuravlev K., Tiras E. The effect of passivation layer, doping and spacer layer on electron-longitudinal
optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures //Materials Science in Semiconductor Processing. — 2021. — Т. 122. — С. 105449.

DOI: 10.1016/j.mssp.2020.105449
WOS:000600423900001

8.Sonmez F., Ardali S., Lisesivdin S. B., Malin T., Mansurov V., Zhuravlev K., Tiras, E. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures
//Journal of Physics: Condensed Matter. — 2021. — Т. 33. — №. 25. — С. 255501.

DOI: 10.1088/1361−648X/abf8d2
WOS:000655451900001

9.Yan E. Maidebura, Vladimir G. Mansurov, Timur V. Malin, Konstantin S. Zhuravlev. Transformation of the elemental composition on the GaN surface during a 2D-3D transition//Applied Surface Science.-2022.-V.120.-C.053101.

DOI: 10.1063/5.0077445
WOS:000737131200004

10.Mansurov V., Galitsyn Y., Malin T., Teys S., Milakhin D., Zhuravlev K. Evolution of the atomic and electronic structures during nitridation of the Si (111) surface under ammonia flux//Applied Surface Science.-2022.- V.571.- C.151276.

DOI: 10.1016/j.apsusc.2021.151276.
WOS:000729468500004