IPM RAS / Structure / Staff / Krasilnik Zakhary

Krasilnik Zakhary

Director of IPM RAS, Deputy Chairman of the Presidium of Nizhny Novgorod scientific centre of the Russian Academy of Sciences, corresponding member of RAS.

Professor, Doctor of the Phys.-math. Sciences, Laureate of the USSR state prize in science and technology (1987). Member of two dissertation councils and scientific council of RAS on the problem «Physics of semiconductors».

Member of the editorial Board of the «Physics-Uspekhi» and «Semiconductors» journals.

Co-chairman of the International Symposium «Nanophysics and nanoelectronics», a member of the program and organizational committees of a number of international and all-Russian scientific conferences.

Head of the interfaculty base chair of UNN in IPM RAS «Physics of nanostructures and nanoelectronics»

Head of the Leading Scientific Schools in Russia «Fundamental scientific problems of silicon electronics development and applications of semiconductor nanostructures in terahertz frequency domain».

Personal data

Born on November, 2 in 1947 in Chernivtsi. Married.

Scientific interests

Solid state spectroscopy, hot carriers in semiconductors, physics of solid-state nanostruuctures, molecular beam epitaxy of silicon nanostructures, silicon optoelectronics.

Education

• 1965 — 1970 — study in N. I. Lobachevsky State University of Nizhniy Novgorod (Faculty of Radiophysics);
• 1977 — defended PhD thesis «Waves interaction in semiconductors with the drift of charge carriers», supervisor — Prof. M. I. Rabinovich;
• 1988 — defended doctoral dissertation «Inverted distributions and induced cyclotron emission of holes with negative masses in semiconductors».

Career

• 1970 — 1977 — junior research associate of Radiophysical Research Institute;
• 1977 — 1993 — junior / senior research associate, head of laboratory, head of department, deputy director of division of The Institute of Applied Physics RAS;
• 1993 — 2009 — deputy director of the IPM RAS, head of the department department for physics of semiconductors;
• 2009 — director of the IPM RAS.

Publications

2013

• L.V.Krasilnikova, M. V. Stepikhova, A. V. Antonov, V. G. Shengurov, Z. F. Krasilnik. The processes of erbium impurity excitation in Si/Si1-xGex:Er/Si heteroepitaxial structures. OPTICAL MATERIALS Volume: 35 Issue: 7 Pages: 1404−1409. 2013.
• S.V.Morozov, D. I. Kryzhkov, A. N. Yablonsky, A. V. Antonov, D. I. Kuritsin, D. M. Gaponova, Y. G. Sadofyev, N. Samal, V. I. Gavrilenko, Z. F. Krasilnik. Type II-type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping. JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 16 Article Number: 163107. 2013.
• M.V.Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasilnik. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si (001) buffer layers. SEMICONDUCTORS Volume: 47 Issue: 3 Pages: 427−432. 2013.
• D.V.Shengurov, V. Y. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova, M. N. Drozdov, Z. F. Krasilnik. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms. SEMICONDUCTORS Volume: 47 Issue: 3 Pages: 433−436. 2013.

2012

• A.J.Kenyon, Y. Fujiwara, A. Kozanecki, M. P. Halsall, Z. F. Krasilnik. Special Issue based on Symposium on rare-earth doped semiconductors and nanostructures for photonics at the E-MRS Fall 2011 Preface. JOURNAL OF LUMINESCENCE Volume: 132 Issue: 12 Special Issue: S. I. Pages: 3099−3099. 2012.
• N.V.Yurasova, M. V. Stepikhova, L. V. Krasilnikova, Z. F. Krasilnik. Theoretical analysis of microdisk resonators based on Si/Si1-xGex:Er light-emitting structures. JOURNAL OF LUMINESCENCE Volume: 132 Issue: 12 Special Issue: S. I. Pages: 3122−3124. 2012.
• B.A.Andreev, Z. F. Krasilnik, D. I. Kryzhkov, D. V. Shengurov, A. N. Yablonskiy, V. P. Kuznetsov. Luminescent properties of MBE-grown Si: Er/SOi structures. JOURNAL OF LUMINESCENCE Volume: 132 Issue: 12 Special Issue: S. I. Pages: 3148−3150. 2012.
• M.V.Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasilnik. Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si (001) strain-relaxed buffers. APPLIED PHYSICS LETTERS Volume: 101 Issue: 15 Article Number: 151601. 2012.
• K.E.Kudryavtsev, V. B. Shmagin, D. V. Shengurov, Z. F. Krasilnik. Auger de-excitation of different Er centers in Si: Er layers grown with sublimation molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 27 Issue: 10 Article Number: 105028. 2012.
• V.Y.Aleshkin, A. A. Dubinov, L. V. Gavrilenko, Z. F. Krasilnik, K. I. Kuritsyn, D. I. Kryzhkov, S. V. Morozov. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure. SEMICONDUCTORS Volume: 46 Issue: 7 Pages: 917−920. 2012.
• V.V.Strelchuk, A. S. Nikolenko, P. M. Lytvyn, V. P. Kladko, A. IGudymenko., M. YValakh., Z. F. Krasilnik, D. N. Lobanov, A. V. Novikov. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1-xGex buffer layers. SEMICONDUCTORS Volume: 46 Issue: 5 Pages: 647−654. 2012.
• V.Y.Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasilnik, D. I. Kryzhkov, D. I. Kuritsyn, S. M. Sergeev, V. G. Lyssenko. Near-Field Mechanism of Photoluminescence Excitation in Quantum Well Heterostructures. JETP LETTERS Volume: 94 Issue: 11 Pages: 811−815. 2012.
• V.A.Kozlov, S. V. Obolensky, V. B. Shmagin, Z. F. Krasilnik. Natural Fluctuations in Tunneling-Current Distribution over the Area of a Reverse-Biased Silicon p-n Junction. SEMICONDUCTORS Volume: 46 Issue: 1 Pages: 130−135. 2012.

2011

• Z.F.Krasilnik, A. V. Novikov, D. N. Lobanov, K. E. Kudryavtsev, A. V. Antonov, S. V. Obolenskiy, N. D. Zakharov and P Werner. SiGe nanostructures with self-assembled islands for Si-based optoelectronics. Semicond. Sci. Technol. 26,014209 (5pp), (2011).
• M.Shaleev, A. Novikov, N. Baydakova, A. Yablonskiy, O. Kuznetsov, Y. Drozdov, D. Lobanov, and Z. Krasilnik. Narrow photoluminescence peak from Ge (Si) islands embedded between tensile-strained Si layers. Physica Status Solidi С 8 (3), 1055−1059, (2011).

2010

• M.Ya.Valakh, P. M. Lytvyn, A. S. Nikolenko, V. V. Strelchuk, Z. F. Krasilnik, D. N. Lobanov, and A. V. Novikov. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers. Appl. Phys. Lett. 96, 141909, (2010).

2009

• A.N.Yablonskiy, L. V. Krasilnikova, B. A. Andreev, D. I. Kryzhkov, V. P. Kuznetsov and Z. F. Krasilnik. Band-to-band and direct optical excitation of Er in silicon: comparison of kinetics and temperature dependence of erbium P. L. Physica B: Condensed Matter, v.404, iss. 23−24, p. 4601−4603, (2009).
• B.A.Andreev, Z. F. Krasilnik, D. I. Kryzhkov, K. E. Kudryavtsev, V. P. Kuznetsov. The features of electro-optical memory effect for 1.54 micron electroluminescence of an Er doped Si diode. Physica B: Physics of Condensed Matter v.404 P. 4597−4600, (2009).
• D.N.Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner. Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3−1.55 mkm. Physica E 41, 935−938, (2009).
• K.E.Kudryavtsev, V. B. Shmagin, D. V. Shengurov and Z. F. Krasilnik. Extremely sharp electroluminescence from Er-doped silicon. Semicond. Sci. Technol. v.24, 065009, (2009).
• K.E.Kudryavtsev, V. B. Shmagin, D. V. Shengurov, Z. F. Krasilnik. High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon. Physica B, v.404 (23−24), 4593 — 4596, (2009).
• K.E.Kudryavtsev, V. P. Kuznetsov, D. V. Shengurov, V. B. Shmagin and Z. F. Krasilnik. Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE grown Si: Er/Si diode structures. Physica E, v.41 (6), 899, (2009).
• V.Shmagin, D. Remizov, V. Kuznetsov, V. Kozlov, S. Obolensky and Z. Krasilnik. A tunnel transit-time light emitting diode as a new type of Si: Er LEDs with impact excitation of Er3+. In: Handbook of Light Emitting and Schottky Diode Research (ISBN: 978−1−60692−462−4) Editor: N. P. Chen, © Nova Science Publishers, Inc. (2009).

2007

• A.V. Novikov, M. V. Shaleev, A. N. Yablonskiy, O. A. Kuznetsov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik. Intense photoluminescence from Ge (Si) self-assembled islands embedded in a tensile-strained Si layer. Semiconductor Science and Technology, v. 22, pp. S29-S32 (2007).
• M.V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov. Photoluminescence of dome and hut shaped Ge (Si) self-assembled islands embedded in a tensile-strained Si layer. Applied Physics Letters v. 91, p.021916 (2007).
• I.N. Demchenko, K. Lawniczak-Jablonska, S. Kret, A. V. Novikov, J. Y. Laval, M. Zak, A. Szczepanska, A. N. Yablonskiy and Z. F. Krasilnik. The effect of local atomic structure on the optical properties of GeSi self-assembled islands buried in silicon matrix. Nanotechnology v. 18 (11), 115711 (7pp) (2007).

2006

• B.A. Andreev, T. Gregorkiewicz, W. Jantsch, Z. F. Krasilnik, D. I. Kryzhkov and V. P. Kuznetsov. 1.54 um Si: Er light-emitting diode with memory function. Applied Physics Letters 88, 201101 (2006).
• S.V. Obolensky, V. B. Shmagin, V. A. Kozlov, K. E. Kudryavtsev, D. Yu. Remizov, Z. F. Krasilnik. A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes. Semicond. Sci. Technol. 21 (2006) 1459−1463.
• Z.F. Krasilnik, B. A. Andreev, T. Gregorkievicz, W. Jantsch, D. I. Kryzhkov, L. V. Krasilnikova, V. P. Kuznetsov, H. Przybylinska, D. Yu. Remizov, V. B. Shmagin, M. V. Stepikhova, V. Yu. Timoshenko, N. Q. Vinh, A. N. Yablonskiy, D. M. Zhigunov. Erbium doped silicon single- and multilayer structures for LED and laser applications. Journal of Materials Research, 2006, 21, p.574−583. Outstanding Meeting Paper.
• T.Gregorkiewicz, B. A. Andreev, M. Forcales, I. Izeddin, W. Jantsch, Z. F. Krasil`nik, D. I. Kryzhkov, V. P. Kuznetsov, J. M. Zavada. Er-doped electro-optical memory element for 1.5 um silicon photonics. IEEE Journal of Selected Topics in Quantum Electronics, V. 12 (6), p.1539−1544 (2006).
• M.V. Stepikhova, L. V. Krasil’nikova, Z. F. Krasil’nik, V. G. Shengurov, V. Yu. Chalkov, D. M. Zhigunov, O. A. Shalygina, V. Yu. Timoshenko. Observation of the population inversion of erbium ion states in Si/Si_1-xGe_x: Er/Si structures under optical excitation. Optical Materials 28, 2006. P. 893−896.
• M.V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov. Photoluminescence of Ge (Si) self-assembled islands embedded in a tensile-strained Si layer. Appl. Phys. Lett. 88, p.011914 (2006).
• M.Ya.Valakh, V. M. Dzhagan, Z. F. Krasilnik, O. S. Lytvyn, D. N. Lobanov, A. V. Novikov, V. O. Yukhymchuk. Properties and interconversion of self-induced SiGe nanoislands of different shapes. Ukr. J. Phys. V. 51 (2), p.200−206 (2006).
• M. Stepikhova, L. Krasil’nikova, Z. Krasil’nik, V. Shengurov, V. Chalkov, S. Svetlov, D. Zhigunov, V. Timoshenko, O. Shalygina, P. Kashkarov. Si/SiGe: Er/Si Structures for Laser Realization: Theoretical Analysis and Luminescent Studies. Journal of Crystal Growth 288, 2006. Issue 1, p. 65−69.
• V.B. Shmagin, S. V. Obolensky, D. Yu. Remizov, V. P. Kuznetsov, Z. F. Krasilnik. The effect of space charge region width on Er-related luminescence in reverse biased Si: Er-based light emitting diodes. IEEE Journal of Selected Topics in Quantum Electronics. 12 (2006) 1556−1560.

2005

2004

• V.B. Shmagin, V. P. Kuznetsov, D. Yu. Remizov, Z. F. Krasil’nik, L. V. Krasil’nikova, D. I. Kryzhkov. Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si: Er light emitting diodes grown with sublimation MBE technique. Materials Science & Engineering B. V. 105/1−3, pp. 70−73 (2004).
• V.Ya Aleshkin, A. V. Antonov, V. I. Gavrilenko, D. V. Kozlov, Z. F. Krasilnik, D. N. Lobanov, A. V. Novikov. Impurity photoconductivity in SiGe/Si: B multi-quantum well heterostructures. Physica B 340−342, pp. 1065−1068, 2004.
• A.G. Milekhin, A. I. Nikiforov, M. Yu. Ladanov, O. P. Pchelyakov, D. N. Lobanov, A. V. Novikov, Z. F. Krasil’nik, S. Schulze, and D. R. T. Zahn. Phonons in Ge/Si Quantum Dot Structures: influence of growth temperature. Physica E, 21/2−4, 464−468 (2004).
• A.V. Novikov, M. V. Shaleev, D. N. Lobanov, A. N. Yablonsky, N. V. Vostokov and Z. F. Krasilnik. Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape. Physica E: Low-dimensional Systems and Nanostructures Volume 23, Issues 3−4, July 2004, Pages 416−420.

2003

• H.Kirmse, R. Otto, R. Schneider, W. Neumann, M. Hanke, M. Schmidbauer, R. Kohler, M. Lentzen, K. Urban, H. Wawra, T. Boeck, I. P. Soshnikov, N. N. Ledentsov, Z. F. Krasilnik, A. Novikov. HRTEM study of growth-correlated properties of (Si, Ge) islands. Microscopy and Microanalysis 9 (Suppl. 3) (2003) 220−221.
• N.Q. Vinh, H. Przyblinska, Z. F. Krasilnik, T. Gregorkiewicz. Phys. Rev. Letters. 90, N6 p.0664011−0664014 2003. Microscopic Structure of Er-related optically active centers in crystalline Si.
• H.Przybylinska, N. Q. Vinh, B. A. Andreev, Z. F. Krasil’nik, T. Gregorkiewicz. Microscopic Structure of Er-Related Optically Active Centers in Si. Mat. Res. Soc. Symp. Proc. Vol. 770, p.1711−1717, 2003.
• Z.F. Krasilnik, V. Y. Aleshkin, B. A. Andreev, O. B. Gusev, W. Jantsch, L. V. Krasilnikova, D. I. Krizhkov, V. P. Kuznetsov, V. G. Shengurov, V. B. Shmagin, N. A. Sobolev, M. V. Stepikhova, A. N. Yablonsky. SMBE grown uniformly and selectively doped Si: Er structures for LEDs and lasers. L. Pavesi, S. Gaponenko, Luca Dal Negro. Towards thr First Silicon Laser. NATO SCIENCE SERIES: II: Mathematics, Physics and Chemistry: V93. 2003 Kluwer Academic Publishers. Netherlands. 445−454.

Conctact details

Phone: +7 (831) 417−94−73

E-mail: zfk@ipmras.ru