Yunin Pavel

Junior research associate of the Department for technology of nanostructures and devices.

Personal data

Born on 16 May, 1989 in Nizhniy Novgorod. Married.

Research interests

X-ray diffraction of semiconductor heterostructures, X-ray phase analysis of polycrystalline; stratified SIMS analysis, methods of data analysis and processing X-ray diffraction and mass spectrometry of secondary ions and the study of segregation and diffusion in semiconductor structures.

Education

School

Gymnasium #2 in Nizhniy Novgorod.

University

Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod.

Career

2010 — 2012 — electronic engineer of the IPM RAS;
2012 — present — junior research associate of the IPM RAS.

Publications

• Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques / B. Ber, P. Babor, P. N. Brunkov, P. Chapon, M. N. Drozdov, R. Duda, D. Kazantsev, V. N. Polkovnikov, P. Yunin, A. Tolstogouzov, Thin Solid Films 540, 96−105 (2013);
• Experimental shift allowance in the deconvolution of SIMS depth profiles / Yunin P. A., Drozdov Yu. N, Drozdov M. N., Surf. Interface Anal. 45, 1228−1232 (2013);
• Monocrystalline InN Films Growth at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation / A. Vodopyanov, Yu. Buzynin, D. Mansfeld, O. Khrykin, Yu. Drozdov, P. Yunin, A. Lukyanov, M. Viktorov, S. Golubev, and V. Shashkin, Jpn. J. Appl. Phys. 52, 110201 (2013);

Contact detail

Phone: +7 (831) 417−94−91 +238

E-mail: yunin@ipmras.ru