IPM RAS / Structure / Staff / Stepikhova Margarita

Stepikhova Margarita

stepihova.jpgResearch associate of the Department for physics of semiconductors, PhD in Physics.

Personal data

Born on 31 May, 1964 in Nizhniy Novgorod.

Master of sports, champion of Russia in checkers.

Research interests

Semiconductor physics, materials and devices for Si-based optoelectronics, micro- and nano-structured materials and devices, rare earth impurities in semiconductors, photoelectric phenomena, high-resolution luminescence and optical spectroscopy.



School #1, Nizhniy Novgorod.


Nizhny Novgorod State University, Faculty of Physics, Sept. 1981 to July 1986.


  • 1986 — 1987 — Engineer-Physicist, Radio-Technical Research Institute, Nizhny Novgorod,
  • 1987 — 1997 — Engineer, Ph. D. student, lecturer, Nizhny Novgorod State University, Department of Physics, Nizhny Novgorod,
  • 1997 — present — Research Associate, Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod.

Work abroad

  • 1994 — 2000 — Postdoc Fellow, Visiting Researcher, University of Linz (Austria),
  • 2000 — 2001 — Visiting Researcher, University of Minho, Braga (Portugal).


  • Optically active erbium centers in silicon / H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R. J. Wilson and B. J. Sealy, Phys. Rev. B 54, 2532 (1996);
  • Direct excitation spectroscopy of Er centers in porous silicon M. Stepikhova, W. Jantsch, G. Kocher, L. Palmetshofer, M. Schoisswohl and H. J. von Bardeleben / Appl. «Phys. Lett. 71, 2975 (1997);
  • Different Er centers in Si and their use for electroluminescence devices / W. Jantsch, S. Lanzerstorfer, L. Palmetshofer, M. Stepikhova and H. Preier, Journal of Luminescence 80, 9 (1999);
  • 1.54 mm infrared photoluminescence phenomena in Er-doped porous silicon / M. Stepikhova, L. Palmetshofer, W. Jantsch, H. J. von Bardeleben, N. Gaponenko, Appl. «Phys. Lett. 74 (4), 537 (1999);
  • Uniformly and selectively silicon: erbium structures produced by the sublimation MBE method / M. Stepikhova, B. Andreev, Z. Krasil’nik, A. Soldatkin, V. Kuznetsov, O. Gusev, Mat. Science & Engineering B 81, and 67 (2001);
  • Dielectric function of nanocrystalline silicon with few nanometers (<3nm) grain size / M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, M. F. Cerqueira, E. Alves, M. Stepikhova, Appl. «Phys. Lett. 82 (18), 2993 (2003);
  • Si/SiGe:Er/Si structures for laser realization: Theoretical analysis and luminescent studies / M. V. Stepikhova, L. V. Krasil’nikova, Z. F. Krasil’nik, V. G. Shengurov, V. Yu. Chalkov, S. P. Svetlov, D. M. Zhigunov, V. Yu. Organs, P. K. Kashkarov, Journal of Crystal Growth, 288 (1), 65 (2006);
  • Erbium doped silicon single — and multilayer structures for light-emitting device and laser applications / Z. F. Krasilnik, B. A. Andreev, D. I. Kryzhkov, L. V. Krasilnikova, V. P. Kuznetsov, D. Yu. Remizov, V. B. Shmagin, M. V. Stepikhova, A. N. Yablonskiy, T. Gregorkievicz, N. Vinh, W. Jantsch, H. Przybylinska, V. Yu. Organs, D. M. Zhigunov, Journal of Materials Research 21 (3), 574 (2006);
  • Modification of Erbium Photoluminescence Excitation Spectra for the Emission Wavelength 1.54 mm in Mesoscopic Structures / N. V. Gaponenko, D. M. Unuchak, A. V. Mudryi, G. K. Malyarevich, O. B. Gusev, M. V. Stepikhova, L. V. Krasilnikova, A. P. Stupak, S. M. Kleshcheva, M. I. Samoilovich, M. Yu. Tsvetkov, Journal of Luminescence 121 (2), 217 (2006);
  • On the role of heterolayer relaxation in luminescence response of Si/SiGe:Er structures / L. Krasilnikova, M. Stepikhova, Yu. Drozdov, V. Chalkov, V. Shengurov, Z. Krasilnik, Physica Status Solidi s 8 (3), 1044 (2011);

Contact detail

Phone: +7 (831) 417-94-82 +273

E-mail: mst@ipmras.ru

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