Gavrilenko Lyudmila

Research associate of the Department for physics of semiconductors, PhD in Physics.

Personal data

Born on 26th November, 1981 in Nizhiy Novgorod. Married.

Physics of semiconductors and nanostructures, spectroscopy.

Lliceum #40 N. Novgorod

Advanced School of General and Applied Physics of N. I. Lobachevsky State University of Nizhniy Novgorod.

V. Ya. Aleshkin, A. V. Antonov, L. V. Gavrilenko, and V. I. Gavrilenko, Fano resonance study in impurity photocurrent spectra of bulk GaAs and GaAs quantum wells doped with shallow donors, Phys. Rev. B 75, 125201.
T. V. Shubina, A. A. Toropov, V. N. Jmerik, D. I. Kuritsyn, L. V. Gavrilenko, Z. F. Krasil’nik, T. Araki, Y. Nanishi, B. Gil, A. O. Govorov, and S. V. Ivanov, Plasmon-induced Purcell effect in InN/In metalsemiconductor Nanocomposites // Phys. Rev. B 82, 073304 (2010).
V Ya Aleshkin, D. I. Burdeiny and L. V. Gavrilenko, Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors // Semicond. Sci. Technol. 25 (2010) 085005
S. V. Morozov, L. V. Gavrilenko, I. V. Erofeeva, A. V. Antonov, K. V. Maremyanin, A. N. Yablonskiy, D. I. Kuritsin, E. E. Orlova, V. I. Gavrilenko, Relaxation of the impurity photoconductivity in p-Ge/GeSi quantum well heterostructures // Semicond. Sci. Tehnol. 26 (2011) 085009 (6pp).

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Address: Academicheskaya Str., 7, Afonino, Nizhny Novgorod region, Kstovsky district, Kstovo region, 603087, Russia

Phone: +7 831 4179473,
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Mail address: GSP-105, Nizhny Novgorod, 603950, Russia