Lobanov Dmitry

Research associate of the Department for physics of semiconductors, PhD in Physics.

Personal data

Born on 29 October, 1976 in Nizhniy Novgorod. Married.

Research interests

the Physics of semiconductors and nanostructures, molecular-пучковая epitaxy.

Education

School

Phys.-Mat. School #180 in Nizhniy Novgorod.

University

the Faculty of radiophysics of N. I. Lobachevsky State University of Nizhniy Novgorod.

Career

• 1999 - 2001 - postgraduate student of the IPM RAS;
• 1999 - 2007 - junior research associate of the IPM RAS;
• 2007 - present - research associate of the IPM RAS.

Publications

• Transition from «dome» to «pyramid» shape of self-assembled GeSi islands / N. V. Vostokov, I. V. Form, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, D. O. Filatov, Journal of Crystal Growth 209, 302 (2000);
• The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures / N. V. Vostokov, S. A. Gusev, Yu. N. Drozdov, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, Z. F. Krasil'nik, M. Miura, N. Usami, Y. Shiraki, V. A. Uakhimchuk, M. Ya. Valax, N. Mestres, J. Pascual, " Phys. Low-Dim. Struct. 3/4, 295 (2001);
• Growth and photoluminescence of Ge(Si) self-assembled islands obtained during the deposition of Ge on a strained SiGe layer / D. N. Lobanov, A. V. Novikov, N. V. Vostokov, Y. N. Drozdov, A. N. Yablonskiy, Z. F. Krasilnik, M. Stoffel, U. Denker, O. G. Schmidt, Optical Materials 27, 818 (2005);
• Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer / M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov, Applied Physics Letters 91, 021916 (2007);
• Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 mcm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner, Physica E 41, 935 (2009)
• SiGe nanostructures with self-assembled islands for Si-based optoelectronics / Z. F. Krasilnik, A. V. Novikov, D. N. Lobanov, K. E. Kudryavtsev, A. V. Antonov, S. V. Obolenskiy, N. D. Zakharov and P Werner, Semicond. Sci. Technol. 26, 014209 (2011).

Contact detail

Phone: +7 (831) 417-94-82 +102

E-mail: dima@ipmras.ru